PDTA115EM,315 related parameters_PDTA115EM,315 PDF documentation_NXP Semiconductors

Transistors - Bipolar - Pre-Biased

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	20 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	100 kOhms
Resistor - Emitter Base (R2)	100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic	150mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	1µA
Frequency - Transition	-
Power - Max	250 mW
Mounting Type	Surface Mount
Package / Case	SC-101, SOT-883
Supplier Device Package	DFN1006-3

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