2SB1481(TOJS,Q,M) related parameters_2SB1481(TOJS,Q,M) PDF documentation_Toshiba Semiconductor and Storage

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	PNP
Current - Collector (Ic) (Max)	4 A
Voltage - Collector Emitter Breakdown (Max)	100 V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 6mA, 3A
Current - Collector Cutoff (Max)	2µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	2000 @ 3A, 2V
Power - Max	2 W
Frequency - Transition	-
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220NIS

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