BC857CLT1 related parameters_BC857CLT1 PDF documentation_ON Semiconductor

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	PNP
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	45 V
Vce Saturation (Max) @ Ib, Ic	650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	420 @ 2mA, 5V
Power - Max	300 mW
Frequency - Transition	100MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3 (TO-236)

Other

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