NJV4030PT1G related parameters_NJV4030PT1G PDF documentation_ON Semiconductor

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	PNP
Current - Collector (Ic) (Max)	3 A
Voltage - Collector Emitter Breakdown (Max)	40 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 300mA, 3A
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 1A, 1V
Power - Max	2 W
Frequency - Transition	160MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Supplier Device Package	SOT-223 (TO-261)

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