NSV20101JT1G related parameters_NSV20101JT1G PDF documentation_ON Semiconductor

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN
Current - Collector (Ic) (Max)	1 A
Voltage - Collector Emitter Breakdown (Max)	20 V
Vce Saturation (Max) @ Ib, Ic	220mV @ 100mA, 1A
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 100mA, 2V
Power - Max	255 mW
Frequency - Transition	350MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-89, SOT-490
Supplier Device Package	SC-89-3

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