2N5551 related parameters_2N5551 PDF documentation_NTE Electronics, Inc

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	NPN
Current - Collector (Ic) (Max)	200 mA
Voltage - Collector Emitter Breakdown (Max)	160 V
Vce Saturation (Max) @ Ib, Ic	200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Power - Max	625 mW
Frequency - Transition	300MHz
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package	TO-92

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