NTE16006 related parameters_NTE16006 PDF documentation_NTE Electronics, Inc

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	NPN
Current - Collector (Ic) (Max)	700 mA
Voltage - Collector Emitter Breakdown (Max)	20 V
Vce Saturation (Max) @ Ib, Ic	400mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 150mA, 10V
Power - Max	1 W
Frequency - Transition	55MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	3-SIP
Supplier Device Package	3-SIP

Other

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