NTE389 related parameters_NTE389 PDF documentation_NTE Electronics, Inc

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	NPN
Current - Collector (Ic) (Max)	4 A
Voltage - Collector Emitter Breakdown (Max)	750 V
Vce Saturation (Max) @ Ib, Ic	5V @ 1.2A, 3A
Current - Collector Cutoff (Max)	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce	-
Power - Max	100 W
Frequency - Transition	4MHz
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-204AA, TO-3
Supplier Device Package	TO-3

Other

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