KSD526O related parameters_KSD526O PDF documentation_ON Semiconductor

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Current - Collector (Ic) (Max)	4 A
Voltage - Collector Emitter Breakdown (Max)	80 V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 300mA, 3A
Current - Collector Cutoff (Max)	30µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 500mA, 5V
Power - Max	30 W
Frequency - Transition	8MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220-3

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