2SA1887(F) related parameters_2SA1887(F) PDF documentation_Toshiba Semiconductor and Storage

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	PNP
Current - Collector (Ic) (Max)	10 A
Voltage - Collector Emitter Breakdown (Max)	50 V
Vce Saturation (Max) @ Ib, Ic	400mV @ 250mA, 5A
Current - Collector Cutoff (Max)	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1A, 1V
Power - Max	2 W
Frequency - Transition	45MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220NIS

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