BF370,112 related parameters_BF370,112 PDF documentation_NXP USA Inc.

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	15 V
Vce Saturation (Max) @ Ib, Ic	-
Current - Collector Cutoff (Max)	400nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 10mA, 1V
Power - Max	500 mW
Frequency - Transition	500MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92-3

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