MJD253-001 related parameters_MJD253-001 PDF documentation_ON Semiconductor

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	PNP
Current - Collector (Ic) (Max)	4 A
Voltage - Collector Emitter Breakdown (Max)	100 V
Vce Saturation (Max) @ Ib, Ic	600mV @ 100mA, 1A
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 200mA, 1V
Power - Max	1.4 W
Frequency - Transition	40MHz
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package	I-PAK

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