BD239ATU related parameters_BD239ATU PDF documentation_ON Semiconductor

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	NPN
Current - Collector (Ic) (Max)	2 A
Voltage - Collector Emitter Breakdown (Max)	60 V
Vce Saturation (Max) @ Ib, Ic	700mV @ 200mA, 1A
Current - Collector Cutoff (Max)	300µA
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 1A, 4V
Power - Max	30 W
Frequency - Transition	-
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220-3

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