MT3S113P(TE12L,F) related parameters_MT3S113P(TE12L,F) PDF documentation_Toshiba Semiconductor and Storage

Transistors - Bipolar - RF

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：4,212(Ref. price)

Qty.	Unit Price	Ext. Price
1	$0.97020	$0.97020

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5.3V
Frequency - Transition	7.7GHz
Noise Figure (dB Typ @ f)	1.45dB @ 1GHz
Gain	10.5dB
Power - Max	1.6W
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-243AA
Supplier Device Package	PW-MINI

Other

Price advantage, MT3S113P(TE12L,F) is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
MS2554A	Microsemi Corporation	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 65V 1.15GHZ M216	No price	In Stock:20104
CMPTH10 TR	Central Semiconductor Corp	Transistors - Bipolar - RF	Datasheet	RF TRANS NPNUHF/VHF SOT23	No price	In Stock:20106
75101H	Microsemi Corporation	Transistors - Bipolar - RF	Datasheet	RF POWER TRANSISTOR	No price	In Stock:20114
BFG520/X,235	NXP USA Inc.	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 15V 9GHZ SOT143B	No price	In Stock:20122
MRF8372	Microsemi Corporation	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 16V 870MHZ 8SO	No price	In Stock:20124