2N5179 related parameters_2N5179 PDF documentation_Microsemi Corporation

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	200MHz
Noise Figure (dB Typ @ f)	4.5dB @ 200MHz
Gain	20dB
Power - Max	300mW
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 3mA, 1V
Current - Collector (Ic) (Max)	50mA
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	TO-206AF, TO-72-4 Metal Can
Supplier Device Package	TO-72

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