0910-150M related parameters_0910-150M PDF documentation_Microsemi Corporation

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	65V
Frequency - Transition	890MHz ~ 1GHz
Noise Figure (dB Typ @ f)	-
Gain	8.1dB ~ 8.5dB
Power - Max	400W
DC Current Gain (hFE) (Min) @ Ic, Vce	-
Current - Collector (Ic) (Max)	12A
Operating Temperature	200°C (TJ)
Mounting Type	Chassis Mount
Package / Case	55KT
Supplier Device Package	55KT

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