2SC3583-T1B-A related parameters_2SC3583-T1B-A PDF documentation_Renesas Electronics America Inc

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	10V
Frequency - Transition	9GHz
Noise Figure (dB Typ @ f)	1.2dB @ 1GHz
Gain	13dB
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 20mA, 8V
Current - Collector (Ic) (Max)	65mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23

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