NESG2101M05-T1-A related parameters_NESG2101M05-T1-A PDF documentation_Renesas Electronics America Inc

Transistors - Bipolar - RF

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：9,620(Ref. price)

Qty.	Unit Price	Ext. Price
1	$0.485	$0.485

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5V
Frequency - Transition	17GHz
Noise Figure (dB Typ @ f)	0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
Gain	11dB ~ 19dB
Power - Max	500mW
DC Current Gain (hFE) (Min) @ Ic, Vce	130 @ 15mA, 2V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	SOT-343F
Supplier Device Package	M05

Other

Price advantage, NESG2101M05-T1-A is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
NE68719-T1	CEL	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 3V 11GHZ 3SMINMOLD	No price	In Stock:17392
NE85619-T1	CEL	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 12V 4.5GHZ SOT523	No price	In Stock:17394
CP616-2N5160-CT	Central Semiconductor Corp	Transistors - Bipolar - RF	Datasheet	RF TRANSISTOR TO-39	No price	In Stock:17396
JANTXV2N2857	Microsemi Corporation	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 15V 500MHZ TO72	No price	In Stock:17398
FMMTH10TA	Diodes Incorporated	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 25V 650MHZ SOT23-3	No price	In Stock:17400