BLT80,115 related parameters_BLT80,115 PDF documentation_NXP USA Inc.

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	10V
Frequency - Transition	900MHz
Noise Figure (dB Typ @ f)	-
Gain	-
Power - Max	2W
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 150mA, 5V
Current - Collector (Ic) (Max)	250mA
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Supplier Device Package	SOT-223

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