2SC5606-A related parameters_2SC5606-A PDF documentation_CEL

Transistors - Bipolar - RF

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：17,068(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Strip
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	3.3V
Frequency - Transition	21GHz
Noise Figure (dB Typ @ f)	1.2dB @ 2GHz
Gain	12.5dB
Power - Max	115mW
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 5mA, 2V
Current - Collector (Ic) (Max)	35mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-523
Supplier Device Package	-

Other

Price advantage, 2SC5606-A is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
MMBT918LT1	ON Semiconductor	Transistors - Bipolar - RF	Datasheet	TRANS SS VHF NPN 15V SOT23	No price	In Stock:17090
MMBTH10LT3G	ON Semiconductor	Transistors - Bipolar - RF	Datasheet	RF SMALL SIGNAL BIPOLAR TRANSIST	$0.02880	In Stock:110212
PH3135-20M	MACOM Technology Solutions	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 65V	$174.53304	In Stock:17094
2SC5012-T1-A	CEL	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 10V 9GHZ SOT343	No price	In Stock:17096
2SC2714-O(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 30V 550MHZ SMINI	$0.44100	In Stock:4422