PUMF12,115 related parameters_PUMF12,115 PDF documentation_NXP USA Inc.

Transistors - Bipolar -Pre-Biased

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V, 40V
Resistor - Base (R1)	22kOhms
Resistor - Emitter Base (R2)	47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA, 5V / 120 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic	150mV @ 500µA, 10mA / 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)	1µA
Frequency - Transition	100MHz
Power - Max	300mW
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	6-TSSOP

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