MIMD10A-7-F related parameters_MIMD10A-7-F PDF documentation_Diodes Incorporated

Transistors - Bipolar -Pre-Biased

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA, 500mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	100Ohms, 10kOhms
Resistor - Emitter Base (R2)	10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 1mA, 10mA / 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	250MHz, 200MHz
Power - Max	200mW
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SOT-363

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