MUN5130DW1T1G related parameters_MUN5130DW1T1G PDF documentation_ON Semiconductor

Transistors - Bipolar -Pre-Biased

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	1kOhms
Resistor - Emitter Base (R2)	1kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 5mA, 10mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	-
Power - Max	250mW
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SC-88/SC70-6/SOT-363

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