PBLS2002S,115 related parameters_PBLS2002S,115 PDF documentation_NXP USA Inc.

Transistors - Bipolar -Pre-Biased

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max)	100mA, 3A
Voltage - Collector Emitter Breakdown (Max)	50V, 20V
Resistor - Base (R1)	4.7kOhms
Resistor - Emitter Base (R2)	4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 10mA, 5V / 150 @ 2A, 2V
Vce Saturation (Max) @ Ib, Ic	150mV @ 500µA, 10mA / 355mV @ 300mA, 3A
Current - Collector Cutoff (Max)	1µA, 100nA
Frequency - Transition	100MHz
Power - Max	1.5W
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO

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