PBLS4003V,115 related parameters_PBLS4003V,115 PDF documentation_NXP USA Inc.

Transistors - Bipolar -Pre-Biased

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max)	100mA, 500mA
Voltage - Collector Emitter Breakdown (Max)	50V, 40V
Resistor - Base (R1)	10kOhms
Resistor - Emitter Base (R2)	10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA, 5V, 200 @ 10mA, 2V
Vce Saturation (Max) @ Ib, Ic	150mV @ 500µA, 10mA, 350mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	1µA, 100nA (ICBO)
Frequency - Transition	300MHz
Power - Max	300mW
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	SOT-666

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