RN1706JE(TE85L,F) related parameters_RN1706JE(TE85L,F) PDF documentation_Toshiba Semiconductor and Storage

Transistors - Bipolar -Pre-Biased

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)
Transistor Type	2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	4.7kOhms
Resistor - Emitter Base (R2)	47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	250MHz
Power - Max	100mW
Mounting Type	Surface Mount
Package / Case	SOT-553
Supplier Device Package	ESV

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