BCR 35PN H6327 related parameters_BCR 35PN H6327 PDF documentation_Infineon Technologies

Transistors - Bipolar -Pre-Biased

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	10kOhms
Resistor - Emitter Base (R2)	47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)	-
Frequency - Transition	150MHz
Power - Max	250mW
Mounting Type	Surface Mount
Package / Case	6-VSSOP, SC-88, SOT-363
Supplier Device Package	PG-SOT363-6

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