PBLS2022D,115 related parameters_PBLS2022D,115 PDF documentation_NXP USA Inc.

Transistors - Bipolar -Pre-Biased

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	1 PNP Pre-Biased, 1 PNP
Current - Collector (Ic) (Max)	100mA, 1.8A
Voltage - Collector Emitter Breakdown (Max)	50V, 20V
Resistor - Base (R1)	4.7kOhms
Resistor - Emitter Base (R2)	4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 10mA, 5V / 200 @ 1A, 2V
Vce Saturation (Max) @ Ib, Ic	150mV @ 500µA, 10mA / 210mV @ 100mA, 1.8A
Current - Collector Cutoff (Max)	1µA, 100nA
Frequency - Transition	130MHz
Power - Max	760mW
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Supplier Device Package	6-TSOP

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