NTE912 related parameters_NTE912 PDF documentation_NTE Electronics, Inc

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	5 NPN
Current - Collector (Ic) (Max)	50mA
Voltage - Collector Emitter Breakdown (Max)	24V
Vce Saturation (Max) @ Ib, Ic	230mV @ 1mA, 10mA
Current - Collector Cutoff (Max)	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 1mA, 3V
Power - Max	750mW
Frequency - Transition	550MHz
Operating Temperature	-55°C ~ 125°C (TA)
Mounting Type	Through Hole
Package / Case	14-DIP (0.300", 7.62mm)
Supplier Device Package	14-PDIP

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