PBSS4230PAN,115 related parameters_PBSS4230PAN,115 PDF documentation_NXP Semiconductors

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	-
Current - Collector (Ic) (Max)	2A
Voltage - Collector Emitter Breakdown (Max)	30V
Vce Saturation (Max) @ Ib, Ic	290mV @ 200mA, 2A
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 1A, 2V
Power - Max	510mW
Frequency - Transition	120MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-UDFN Exposed Pad
Supplier Device Package	6-HUSON-EP (2x2)

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