PBSS5160DS,115 related parameters_PBSS5160DS,115 PDF documentation_NXP USA Inc.

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	2 PNP (Dual)
Current - Collector (Ic) (Max)	770mA
Voltage - Collector Emitter Breakdown (Max)	60V
Vce Saturation (Max) @ Ib, Ic	330mV @ 100mA, 1A
Current - Collector Cutoff (Max)	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	150 @ 500mA, 5V
Power - Max	420mW
Frequency - Transition	185MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Supplier Device Package	6-TSOP

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