TRS8E65F,S1Q related parameters_TRS8E65F,S1Q PDF documentation_Toshiba Semiconductor and Storage

Diodes - Rectifiers - Single

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Specifications

Description	Details
Series	-
Package	Tube
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	8A (DC)
Voltage - Forward (Vf) (Max) @ If	1.6 V @ 8 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	40 µA @ 650 V
Capacitance @ Vr, F	28pF @ 650V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-220-2
Supplier Device Package	TO-220-2L
Operating Temperature - Junction	175°C (Max)

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